Technical characteristics of rie-pe etcher and some data analysisRIE-PE刻蚀机技术性的特点以及一些资料分析

在众多半导体工艺中，刻蚀是决定特征尺寸的核心工艺技术之一。刻蚀分为湿法刻蚀和干法刻蚀。湿法刻蚀采用化学腐蚀进行，是传统的刻蚀工艺。它具有各向同性的缺点，即在刻蚀过程中不但有所需要的纵向刻蚀，也有不需要的横向刻蚀，因而精度差，线宽一般在3um以上。RIE-PE刻蚀机是因大规模集成电路生产的需要而开发的精细加工技术，它具有各向异性特点，在最大限度上保证了纵向刻蚀，还可以控制横向刻蚀。介绍的RIE-PE刻蚀机就是属于干法ICP刻蚀系统。

    RIE-PE等离子刻蚀机为了适应工艺发展需求，各家设备厂商都推出了一系列的关键技术来满足工艺需求。主要有以下几类；

    2、等离子体技术：等离子体密度和能量单独控制。

    3、等离子体约束：减少Particle，提高结果重复性。

    4、工艺组件：适应不同工艺需求，对应不同的工艺组件，比如不同的工艺使用不同。

    1、双区进气的目的是通过调节内外区敏感气体的量提高整个刻蚀均一性，结果比较明显。

    6、反应室结构设计；由200mm时的侧抽，改为下抽或者侧下抽。有利于提高气流均一性。

    5、 Narrow Gap：窄的Gap设计可以使得电子穿过壳层，中和晶圆上多余的离子，有利于提高刻蚀剖面陡直度。

    RIE-PE刻蚀机特点：

    1、高选择性各向异性腐蚀，符合苛刻的制程要求。

    2、全自动"一键"操作完全代替手动操作。

    3、易于使用的电脑触摸屏的参数控制和配方输入和存储。

    4、晶圆尺寸达8"英寸直径，圆滑、紧凑的设计使用最少的洁净室空间。

    5、RIE-PE刻蚀机设计用于蚀刻氮化物、氧化物和任意需要氟基化学的薄膜或基片。其安装在节省空间的平台上的模块化设计，使其成为全世界许多用户的首选系统。

    6、高级选项：ICP(电感耦合等离子)、涡沦泵、带背侧氦冷却系统和端点检测系统的静电吸盘等。

    7、产品已全面开发出各种工艺，RIE-PE刻蚀机用于对使用氟基化学的材料进行各向同性和各向异性蚀刻，其中包括：碳、环氧树脂、石墨、铟、钼、氮氧化物、光阻剂、聚酰亚胺、石英、硅、氧化物、氮化物、钽、氮化钽、氮化钛、钨钛以及钨。

    In many semiconductor processes, etching is one of the key technologies to determine the feature size. Etching can be divided into wet etching and dry etching. Wet etching is a traditional etching process, which is carried out by chemical etching. It has the disadvantage of isotropy, that is, in the etching process, there are not only longitudinal etching but also transverse etching, so the accuracy is poor, and the linewidth is generally more than 3um. Rie-pe etching machine is a fine machining technology developed for the needs of large-scale integrated circuit production. It has anisotropic characteristics, which ensures the maximum longitudinal etching and can also control the transverse etching. The rie-pe etching machine is a dry ICP etching system. 

    In order to meet the needs of process development, various equipment manufacturers have introduced a series of key technologies to meet the process requirements. There are mainly the following categories: 

2. Plasma technology: plasma density and energy are controlled separately. 

3. Plasma confinement: reduce the number of particles and improve the repeatability of results. 

4. Process components: adapt to different process requirements, corresponding to different process components, for example, different processes are used differently. 

1.The purpose of dual zone air intake is to improve the whole etching uniformity by adjusting the amount of sensitive gas in the inner and outer zone, and the results are obvious.

6. Structural design of reaction chamber: from side pumping at 200mm to down pumping or side down pumping. It is beneficial to improve the uniformity of air flow. 

5. Narrow gap: the narrow gap design can make electrons pass through the shell, neutralize the extra ions on the wafer, and improve the etching profile steepness. 

Rie-pe etching machine features: 

   1. High selective anisotropic etching, in line with the stringent process requirements.

   2. Fully automatic "one key" operation completely replaces manual operation. 

   3. Easy to use computer touch screen parameter control and formula input and storage. 

   4. Wafer size up to 8 "inch diameter, sleek and compact design with minimum clean room space. 

   5. The rie-pe etching machine is designed to etch nitrides, oxides and any film or substrate requiring fluorochemistry. Its modular design, which is installed on a space saving platform, makes it the preferred system for many users around the world. 

   6. Advanced options: ICP (inductively coupled plasma), vortex pump, electrostatic suction cup with back helium cooling system and endpoint detection system, etc. 

   7. Various processes have been developed for the products. Rie-pe etching machine is used for isotropic and anisotropic etching of materials using fluorine-based chemistry, including carbon, epoxy resin, graphite, indium, molybdenum, nitrogen oxide, photoresist, polyimide, quartz, silicon, oxide, nitride, tantalum, tantalum nitride, titanium nitride, tungsten titanium and tungsten.