湿法刻蚀相对于等离子刻蚀的缺点Disadvantages of wet etching compared with plasma etching

等离子刻蚀机，又叫等离子蚀刻机、等离子平面刻蚀机、等离子体刻蚀机、等离子表面处理仪、等离子清洗系统等。等离子刻蚀，是干法刻蚀中最常见的一种形式，其原理是暴露在电子区域的气体形成等离子体，由此产生的电离气体和释放高能电子组成的气体，从而形成了等离子或离子，电离气体原子通过电场加速时，会释放足够的力量与表面驱逐力紧紧粘合材料或蚀刻表面。某种程度来讲，等离子清洗实质上是等离子体刻蚀的一种较轻微的情况。进行干式蚀刻工艺的设备包括反应室、电源、真空部分。工件送入被真空泵抽空的反应室。气体被导入并与等离子体进行交换。等离子体在工件表面发生反应，反应的挥发性副产物被真空泵抽走。等离子体刻蚀工艺实际上便是一种反应性等离子工艺。近期的发展是在反应室的内部安装成搁架形式，这种设计的是富有弹性的，用户可以移去架子来配置合适的等离子体的蚀刻方法:反应性等离子体(RIE)，顺流等离子体(downstream)，直接等离子体(direction plasma)。

1. 硅片水平运行，机片高(等离子刻蚀去PSG槽式浸泡甩干，硅片受冲击小);

2. 下料吸笔易污染硅片(等离子刻蚀去PSG后甩干);

3. 传动滚抽易变形(PVDF，PP材质且水平放置易变形);

4. 成本高(化学品刻蚀代替等离子刻蚀成本增加)。

此外，有些等离子刻蚀机，如SCE等离子刻蚀机还具备"绿色"优势:无氟氯化碳和污水、操作和环境安全、排除有毒和腐蚀性的液体。SCE等离子刻蚀机支持以下四种平面等离子体处理模式:

直接模式--基片可以直接放置在电极托架或是底座托架上，以获得最大的平面刻蚀效果。

各向同性刻蚀与非各向同性刻蚀

各向同性刻蚀与非各向同性刻蚀

定向模式--需要非等向性刻蚀(anisotropic etching)的基片可以放置在特制的平面托架上。

下游模式--基片可以放置在不带电托架上，以便取得微小的等离子体效果。

定制模式--当平面刻蚀配置不过理想时，特制的电极配置可以提供。

Plasma etcher, also known as plasma etcher, plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electronic region forms plasma, which produces ionized gas and releases gas composed of high-energy electrons, thus forming plasma or ion. When the ionized gas atom accelerates through the electric field, it will release enough force to tightly bond the material or etching surface with the surface expulsion force. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process. The recent development is to install the reaction chamber in the form of a shelf. This kind of design is elastic. Users can remove the shelf to configure the appropriate etching methods of plasma: reactive plasma (RIE), downstream plasma (downstream), direct plasmon (direction plasma). 

1. Horizontal operation of silicon wafer, high machine chip (plasma etching to PSG bath soaking and drying, small impact on silicon wafer);

2. Cutting pen easy to contaminate silicon wafer (plasma etching to PSG after drying);

3. Transmission roll extraction easy to deform (PVDF, PP material and horizontal placement easy to deform);

   4. High cost (chemical etching to replace plasma etching cost increases). 

       In addition, some plasma etchers, such as SCE plasma etchers, also have "green" advantages: no CFC and sewage, safe operation and environment, toxic and corrosive liquids are eliminated. SCE plasma etcher supports the following four plane plasma processing modes: 

direct mode - the substrate can be directly placed on the electrode bracket or the base bracket to obtain the maximum plane etching effect. 

Isotropic etching and non-isotropic etching 

Otropic etching and non-isotropic etching 

Orientation mode -- substrate requiring anisotropic etching can be placed on a special plane bracket.

Downstream mode - the substrate can be placed on an uncharged bracket to achieve tiny plasma effects. 

Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided.