等离子刻蚀机的检验操作及处理模式Inspection operation and processing mode of plasma etching machine

等离子刻蚀机的检验操作及处理模式

等离子刻蚀机的原理是在真空状态下，利用射频辐射使得氧、氩、氮、四氟化碳等气体生成具有高反应活性的离子与器件等反应形成挥发性化合物，然后由真空系统奖这些挥发性物质清除出去。

等离子刻蚀机检验操作及判断

1.确认万用表工作正常，量程置于200mV。

2.冷探针连接电压表的正电极，热探针与电压表的负极相连。

3.用冷、热探针接触硅片一个边沿不相连的两个点，电压表显示这两点间的电压为正值，说明导电类型为P型，刻蚀合格。相同的方法检测另外三个边沿的导电类型是否为P型。

4.如果经过检验，任何一个边沿没有刻蚀合格，则这一批硅片需要重新装片，进行刻蚀。

等离子刻蚀机处理模式：

直接模式——基片可以直接放置在电极托架或是底座托架上，以获得最大的平面刻蚀效果。

定向模式——需要非等向性刻蚀（anisotropicetching）的基片可以放置在特制的平面托架上。

下游模式——基片可以放置在不带电托架上，以便取得微小的等离子体效果。

定制模式——当平面刻蚀配置不过理想时，特制的电极配置可以提供。

                                      Inspection operation and processing mode of plasma etching machine

The principle of the plasma etching machine is to use radio frequency radiation to generate highly reactive ions from oxygen, argon, nitrogen, carbon tetrafluoride and other gases in a vacuum state to react with devices to form volatile compounds, and then the vacuum system awards these Volatile substances are removed.  

Plasma etching machine inspection operation and judgment 

1.Confirm that the multimeter is working normally and the range is set to 200mV. 

2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter. 

3. Use cold and hot probes to touch two unconnected points on one edge of the silicon wafer. The voltmeter shows that the voltage between these two points is positive, indicating that the conductivity type is P-type and the etching is qualified. The same method detects whether the conductivity type of the other three edges is P type. 

4. If after inspection, any edge is not etched qualified, this batch of silicon wafers need to be reloaded and etched.

Plasma etching machine processing mode: 

Direct mode-the substrate can be directly placed on the electrode bracket or the base bracket to obtain the maximum planar etching effect. 

Oriented mode-substrates that require anisotropic etching can be placed on a special flat carrier. 

Downstream mode-the substrate can be placed on an uncharged carrier to obtain a tiny plasma effect. 

Customized mode-when the planar etching configuration is not ideal, a special electrode configuration can be provided.