Name: Suzhou cycas Microelectronics Co., Ltd.
Address: 1st floor,B06 building,No.2,Fuxing Road,Zhangjiagang Economic Development Zone,Jiangsu Province 215600PRC
What is the performance of the plasma stripper during etching operation?
Plasma glue removal machine is very simple and efficient to remove glue. The surface after glue removal is clean and smooth, without any scratches, low cost and environmentally friendly. When the dielectric plasma remover is used for etching, it is generally applied to a capacitively coupled plasma parallel plate reactor. In the parallel plate reactor, the reactive ion etching chamber uses a small cathode area and an anode area. Large asymmetric design, and the object to be etched is placed on the smaller electrode.
During the etching operation, the thermal motion generated by the RF power supply will make the negatively charged free electrons with small mass and fast moving speed reach the cathode quickly, while the positive ions are difficult to reach at the same time due to the large mass and slow speed. The cathode will form a negatively charged sheath near the cathode. Under the acceleration of this sheath, positive ions will bombard the surface of the silicon wafer vertically, which will accelerate the chemical reaction on the surface and cause the reaction to form Since the etch rate is extremely fast, the ion bombardment will also enable anisotropic etching.
Plasma degumming operation method: insert the film to be removed into the quartz boat and parallel the airflow direction, push it between the two electrodes of the vacuum chamber, evacuate to 1.3Pa, pass in appropriate oxygen, keep the vacuum chamber pressure at 1.3-13Pa, and add high-frequency power , A lavender glow discharge occurs between the electrodes. After adjusting the power, flow and other technical parameters, different glue removal rates can be obtained. When the glue film is cleaned, the glow disappears.
Influencing factors of plasma degumming machine:
1. Frequency selection: The higher the frequency, the easier it is for oxygen to ionize to form plasma. If the frequency is too high, so that the amplitude of the electron is shorter than its mean free path, the probability of collision between the electron and the gas molecule is reduced, and the ionization rate is reduced.
2. Power influence: Regarding a certain amount of gas, the power is large, the density of active particles in the plasma is also large, and the speed of degumming is also fast; but when the power is increased to a certain value, the reactive ions required for energy consumption will reach fullness. No matter how high the power is, the glue removal speed will not increase significantly. Due to the high power and high substrate temperature, the power should be adjusted according to technical requirements.
3. Selection of the degree of vacuum: Properly increasing the degree of vacuum can make the mean free path of electron movement larger, so the energy obtained from the electric field is larger, which is beneficial for ionization. In addition, when the oxygen flow rate must be observed, the higher the vacuum degree, the greater the relative proportion of oxygen, and the greater the concentration of active particles that occur. However, if the vacuum is too high, the concentration of active particles will decrease instead.