What is the performance of the plasma stripper during etching operation?等离子去胶机进行刻蚀操作时有哪些表现？

等离子去胶机进行刻蚀操作时有哪些表现？

  等离子去胶机进行去胶操作十分的简单，并且效率高，去胶后的表面干净光洁、没有任何的划痕、成本低、环保。电介质等离子体去胶机在进行刻蚀时，一般会被应用在电容耦合等离子体平行板反应器上，在平行板反应器中，反应离子刻蚀腔体所采用的是阴极面积小，阳极面积大的不对称设计，而需要被刻蚀的物件则是被放置到面积较小的电极之上。

  在进行刻蚀操作时，其射频电源所产生的热运动会使质量小、运动速度快的带负电自由电子很快到达阴极，而正离子则是由于质量大、速度慢而很难在同一时刻达到阴极，从而就会在阴极附近形成带负电的鞘层，正离子在这个鞘层的加速之下，就会垂直的轰击在硅片的表面，从而使得表面的化学反应加快，并且会使得反应生成物脱离，因此其刻蚀速度极快，离子的轰击也会使各向异性刻蚀得以实现。

  等离子去胶操作方法：将待去胶片插入石英舟并平行气流方向，推入真空室两电极间，抽真空到1.3Pa，通入恰当氧气，坚持真空室压力在1.3-13Pa，加高频功率，在电极间发生淡紫色辉光放电，经过调理功率、流量等技术参数，可得不一样去胶速率，当胶膜去净时，辉光不见。

  等离子去胶机去胶影响要素：

  1.频率挑选：频率越高，氧越易电离构成等离子体。频率太高，以致电子振幅比其平均自由程还短，则电子与气体分子磕碰概率反而减少，使电离率降低。

　2.功率影响：关于必定量的气体，功率大，等离子体中的的活性粒子密度也大，去胶速度也快；但当功率增大到必定值，反响所能耗费的活性离子到达饱满，功率再大，去胶速度则无显着添加。由于功率大，基片温度高，所以应根据技术需求调理功率。

　3.真空度的挑选：恰当进步真空度，可使电子运动的平均自由程变大，因而从电场取得的能量就大，有利电离。别的当氧气流量必守时，真空度越高，则氧的相对份额就大，发生的活性粒子浓度也就大。但若真空度过高，活性粒子浓度反而会减小。

                                      What is the performance of the plasma stripper during etching operation?

    Plasma glue removal machine is very simple and efficient to remove glue. The surface after glue removal is clean and smooth, without any scratches, low cost and environmentally friendly. When the dielectric plasma remover is used for etching, it is generally applied to a capacitively coupled plasma parallel plate reactor. In the parallel plate reactor, the reactive ion etching chamber uses a small cathode area and an anode area. Large asymmetric design, and the object to be etched is placed on the smaller electrode.

   During the etching operation, the thermal motion generated by the RF power supply will make the negatively charged free electrons with small mass and fast moving speed reach the cathode quickly, while the positive ions are difficult to reach at the same time due to the large mass and slow speed. The cathode will form a negatively charged sheath near the cathode. Under the acceleration of this sheath, positive ions will bombard the surface of the silicon wafer vertically, which will accelerate the chemical reaction on the surface and cause the reaction to form Since the etch rate is extremely fast, the ion bombardment will also enable anisotropic etching.

  Plasma degumming operation method: insert the film to be removed into the quartz boat and parallel the airflow direction, push it between the two electrodes of the vacuum chamber, evacuate to 1.3Pa, pass in appropriate oxygen, keep the vacuum chamber pressure at 1.3-13Pa, and add high-frequency power , A lavender glow discharge occurs between the electrodes. After adjusting the power, flow and other technical parameters, different glue removal rates can be obtained. When the glue film is cleaned, the glow disappears.

 Influencing factors of plasma degumming machine: 

    1. Frequency selection: The higher the frequency, the easier it is for oxygen to ionize to form plasma. If the frequency is too high, so that the amplitude of the electron is shorter than its mean free path, the probability of collision between the electron and the gas molecule is reduced, and the ionization rate is reduced. 

    2. Power influence: Regarding a certain amount of gas, the power is large, the density of active particles in the plasma is also large, and the speed of degumming is also fast; but when the power is increased to a certain value, the reactive ions required for energy consumption will reach fullness. No matter how high the power is, the glue removal speed will not increase significantly. Due to the high power and high substrate temperature, the power should be adjusted according to technical requirements. 

    3. Selection of the degree of vacuum: Properly increasing the degree of vacuum can make the mean free path of electron movement larger, so the energy obtained from the electric field is larger, which is beneficial for ionization. In addition, when the oxygen flow rate must be observed, the higher the vacuum degree, the greater the relative proportion of oxygen, and the greater the concentration of active particles that occur. However, if the vacuum is too high, the concentration of active particles will decrease instead.