Magnetron sputtering has two characteristics of "low temperature" and "high speed"磁控溅射具有“低温”、“高速”两大特点Magnetron sputtering has two characteristics of

磁控溅射具有“低温”、“高速”两大特点

   产生这两大特点的原理为：磁控溅射是以磁场来改变电子的运动方向，并束缚和延长电子的运动轨迹，从而提高电子对工作气体的电离几率和有效的利用了电子的能量。因此，是正离子对靶材轰击所引起的靶材溅射更加有效。同时受正交电磁场的束缚电子，又只能在其能量要耗尽时才沉积在基片上。所以磁控溅射具有“低温”“高速”这两大特点。

                                  Magnetron sputtering has two characteristics of "low temperature" and "high speed"

   The principle of producing these two characteristics is: magnetron sputtering uses magnetic field to change the direction of electron motion, and to bind and extend the trajectory of electron motion, so as to improve the ionization probability of electron to working gas and effectively use the energy of electron. Therefore, sputtering caused by positive ion bombardment is more effective. At the same time, the electrons bound by the orthogonal electromagnetic field can only be deposited on the substrate when their energy is exhausted. Therefore, magnetron sputtering has two characteristics of "low temperature" and "high speed".