语言
Magnetron sputtering (磁控溅射台))

新闻资讯

热门关键词

联系我们

名 称:苏州赛森电子科技有限公司

电 话:0512-58987901

传 真:0512-58987201

邮 箱:sales@cycas.com

地 址:江苏省张家港经济开发区福新路1202号 215600PRC

网 址:www.cycas.com

Name: Suzhou cycas  Microelectronics Co., Ltd.

Tel.: 0512-58987901

Fax: 0512-58987201

Email: sales@cycas.com

Address: No.1202,Fuxin Road,Zhangjiagang Economic Development Zone,Jiangsu Province 215600PRC

Website: www.cycas.com 

等离子刻蚀技术  Plasma etching technology

您的当前位置: 首 页 >> 新闻资讯 >> 行业新闻

等离子刻蚀技术  Plasma etching technology

发布日期:2019-10-31 作者: 点击:

等离子刻蚀技术

N$@F[7A`0F(I@}GEL8X55}4.png

等离子刻蚀机,又叫等离子蚀刻机、等离子平面刻蚀机、等离子体刻蚀机、等离子表面处理仪、等离子清洗系统等。等离子刻蚀,是干法刻蚀中最常见的一种形式,其原理是暴露在电子区域的气体形成等离子体,由此产生的电离气体和释放高能电子组成的气体,从而形成了等离子或离子,电离气体原子通过电场加速时,会释放足够的力量与表面驱逐力紧紧粘合材料或蚀刻表面。某种程度来讲,等离子清洗实质上是等离子体刻蚀的一种较轻微的情况。进行干式蚀刻工艺的设备包括反应室、电源、真空部分。工件送入被真空泵抽空的反应室。气体被导入并与等离子体进行交换。等离子体在工件表面发生反应,反应的挥发性副产物被真空泵抽走。等离子体刻蚀工艺实际上便是一种反应性等离子工艺。近期的发展是在反应室的内部安装成搁架形式,这种设计的是富有弹性的,用户可以移去架子来配置合适的等离子体的蚀刻方法:反应性等离子体(RIE),顺流等离子体(downstream),直接等离子体(direction plasma)。


原理


感应耦合等离子体刻蚀法(Inductively Coupled Plasma Etch,简称ICPE)是化学过程和物理过程共同作用的结果。它的基本原理是在真空低气压下,ICP 射频电源产生的射频输出到环形耦合线圈,以一定比例的混合刻蚀气体经耦合辉光放电,产生高密度的等离子体,在下电极的RF 射频作用下,这些等离子体对基片表面进行轰击,基片图形区域的半导体材料的化学键被打断,与刻蚀气体生成挥发性物质,以气体形式脱离基片,从真空管路被抽走。


如果需要进行刻蚀,和蚀刻后,除污,清除浮渣,表面处理,等离子体聚合,等离子体灰化,或任何其他的蚀刻应用,我们能够制造客户完全信任的等离子处理系统,以满足客户的需要。我们既有常规的等离子体蚀刻系统,也有反应性离子蚀刻系统,我们可以制造系列的产品,也可以为客户定制特殊的系统。我们可以提供快速/高品质的蚀刻,减轻等离子伤害,并提供无与伦比的均匀性。

 

等离子体处理可应用于所有的基材,甚至复杂的几何构形都可以进行等离子体活化、等离子体清洗,等离子体镀膜也毫无问题。等离子体处理时的热负荷及机械负荷都很低,因此,低压等离子体也能处理敏感性材料。

                                                                     Plasma etching technology

   Plasma etcher, also known as plasma etcher, plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electronic region forms plasma, resulting in ionized gas and the gas composed of high-energy electrons, thus forming plasma or ion. When the ionized gas atom accelerates through the electric field, it will release enough force to tightly bond the material or etching surface with the surface expulsion force. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process. The recent development is to install the reaction chamber in the form of a shelf. This kind of design is elastic. Users can remove the shelf to configure the appropriate etching methods of plasma: reactive plasma (RIE), downstream plasma (downstream), direct plasmon (direction plasma).

   

   Inductively coupled plasma etch (ICPE) is the result of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged by coupling glow discharge to produce high-density plasma, RF at the lower electrode Under RF, these plasmas bombard the surface of the substrate. The chemical bond of the semiconductor material in the pattern area of the substrate is interrupted, and volatile substances are generated with the etching gas, which is separated from the substrate in the form of gas, and then pumped out from the vacuum pipeline.


  If etching, and after etching, decontamination, scum removal, surface treatment, plasma polymerization, plasma ashing, or any other etching application is required, we can manufacture a plasma treatment system that customers fully trust to meet their needs. We have both conventional plasma etching system and reactive ion etching system. We can manufacture a series of products, or customize special systems for customers. We can provide fast / high quality etching, reduce plasma damage and provide unparalleled uniformity. 


  Plasma treatment can be applied to all substrates, even complex geometry can be plasma activated, plasma cleaning, plasma coating is no problem. The heat load and mechanical load of plasma treatment are very low, so low pressure plasma can also treat sensitive materials.


本文网址:http://www.cycas.com/news/435.html

相关标签:等离子刻蚀机

最近浏览: