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In the plasma degumming machine, what is the main gas that plays a degumming role?在等离子去胶机中主要起到去胶作用的气体是什么?

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In the plasma degumming machine, what is the main gas that plays a degumming role?在等离子去胶机中主要起到去胶作用的气体是什么?

发布日期:2019-04-13 作者:www.cycas.com 点击:

  小型等离子干法去胶机与其他普通去胶机相比,体积更小、性能优良、用途广泛、效率高、价格低、使用方便。除此之外,小型等离子去胶机还具有十分优秀的均匀性和重复性,因此在各个科研单位和企业中都有十分广泛的应用,而且除了可以进行RIE刻蚀之外,还可以进行硅、二氧化硅、氮化硅等的蚀刻操作。

  在等离子去胶机中主要起到去胶作用的气体为氧气,在进行去胶操作时,只需要将硅片放置到真空反应系统中,通入少量氧气,并加上1500伏特的高压,再由高频信号发生器发出高频信号,使得石英管内形成一个强电磁场,使氧气发生电离之后形成阳离子以及活化的阳原子和氧分子以及电子的混合物等离子体的辉光柱。其中的活泼氧原子可以迅速的将聚酰亚胺膜进行氧化,并生成可挥发性气体,并被机械泵出走,这样就可以将硅片上的聚酰亚胺膜清除了。

等离子刻蚀机

  采用等离子去胶机进行去胶操作十分的简单,并且效率高,去胶后的表面干净光洁、没有任何的划痕、成本低、环保。电介质等离子体去胶机在进行刻蚀时,一般会被应用在电容耦合等离子体平行板反应器上,在平行板反应器中,反应离子刻蚀腔体所采用的是阴极面积小,阳极面积大的不对称设计,而需要被刻蚀的物件则是被放置到面积较小的电极之上。

  等离子去胶机在进行刻蚀操作时,其射频电源所产生的热运动会使质量小、运动速度快的带负电自由电子很快到达阴极,而正离子则是由于质量大、速度慢而很难在同一时刻达到阴极,从而就会在阴极附近形成带负电的鞘层,正离子在这个鞘层的加速之下,就会垂直的轰击在硅片的表面,从而使得表面的化学反应加快,并且会使得反应生成物脱离,因此其刻蚀速度极快,离子的轰击也会使各向异性刻蚀得以实现。

      Compared with other ordinary degumming machines, the small plasma dry degumming machine has smaller volume, better performance, wide use, high efficiency, low price and convenient use. In addition, the small plasma degummer also has excellent uniformity and repeatability, so it is widely used in various scientific research institutions and enterprises. Besides RIE etching, it can also be used for etching silicon, silicon dioxide, silicon nitride, etc. 

     In the plasma degumming machine, oxygen is the main gas that plays the role of degumming. In the degumming operation, it is only necessary to place the silicon wafer in the vacuum reaction system, introduce a small amount of oxygen, and add a high pressure of 1500 volts, then the high frequency signal is sent out by the high frequency signal generator, so that a strong electromagnetic field is formed in the quartz tube, after the oxygen is ionized, cation and activated are formed A glow column for a plasma of mixtures of positive atoms and oxygen molecules and electrons. The active oxygen atom can oxidize the polyimide film rapidly, generate volatile gas, and be pumped out mechanically, so that the polyimide film on the silicon wafer can be removed. 

   Using plasma degumming machine to degumme is very simple and efficient. After degumming, the surface is clean and clean without any scratch, low cost and environmental protection. Dielectric plasma degumming machine is generally used in the parallel plate reactor of capacitance coupled plasma. In the parallel plate reactor, the reactive ion etching chamber adopts the asymmetric design with small cathode area and large anode area, and the objects to be etched are placed on the electrode with small area. 

   During the etching operation of plasma degumming machine, the hot motion generated by the RF power supply will make the free electron with negative charge with small mass and fast moving speed reach the cathode quickly, while the positive ion is difficult to reach the cathode at the same time due to its large mass and slow moving speed, so a negative sheath will be formed near the cathode, and the positive ion will sag under the acceleration of this sheath The direct bombardment on the surface of silicon wafer will accelerate the chemical reaction on the surface and separate the reaction products, so the etching speed is very fast, and the ion bombardment will also realize the anisotropic etching.

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