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Principle and solution of medium frequency magnetron sputtering coating technology中频磁控溅射镀膜技术的原理及问题解答

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Principle and solution of medium frequency magnetron sputtering coating technology中频磁控溅射镀膜技术的原理及问题解答

发布日期:2019-01-19 作者:www.cycas.com 点击:

真空炉磁控溅射包括很多种类。各有不同工作原理和应用对象。但有一共同点:利用磁场与电子交互作用,使电子在靶表面附近成螺旋状运行,从而增大电子撞击氩气产生离子的概率。所产生的离子在电场作用下撞向靶面从而溅射出靶材。在近几十年的发展中,大家逐渐采用永久磁铁,很少用线圈磁铁。

靶源分平衡和非平衡式,平衡式靶源镀膜均匀,非平衡式靶源镀膜膜层和基体结合力强。平衡靶源多用于半导体光学膜,非平衡多用于磨损装饰膜。

不管平衡非平衡,若磁铁静止,其磁场特性决定一般靶材利用率小于30%。为增大靶材利用率,可采用旋转磁场。但旋转磁场需要旋转机构,同时溅射速率要减小。旋转磁场多用于大型或贵重靶。如半导体膜溅射。对于小型设备和一般工业设备,多用磁场静止靶源。真空炉

用磁控靶源溅射金属和合金很容易,点火和溅射很方便。这是因为靶(阴极),等离子体,和被溅零件/真空腔体可形成回路。但若溅射绝缘体如陶瓷则回路断了。于是人们采用高频电源,回路中加入很强的电容。这样在绝缘回路中靶材成了一个电容。但高频磁控溅射电源昂贵,溅射速率很小,同时接地技术很复杂,因而难大规模采用。为解决此问题,发明了磁控反应溅射。就是用金属靶,加入氩气和反应气体如氮气或氧气。当金属靶材撞向零件时由于能量转化,与反应气体化合生成氮化物或氧化物。

磁控溅射台

磁控溅射台反应溅射绝缘体看似容易,而实际操作困难。主要问题是反应不光发生在零件表面,也发生在阳极,真空腔体表面,以及靶源表面。从而引起灭火,靶源和工件表面起弧等。德国莱宝发明的孪生靶源技术,很好的解决了这个问题。其原理是一对靶源互相为阴阳极,从而消除阳极表面氧化或氮化。

冷却是一切源(磁控,多弧,离子)所必需,因为能量很大一部分转为热量,若无冷却或冷却不足,这种热量将使靶源温度达一千度以上从而溶化整个靶源。

一台磁控设备往往很昂贵,但大家容易将钱花在设备其它上如真空泵,MFC, 膜厚测量上而忽略靶源。再好的磁控溅射设备若无好靶源,就像画龙而没有点睛一样。

采用中频溅射的优点是可得到光滑致密.膜层硬度高.膜厚可线性成长.不中毒.温升缓和,但设备的要求较高,工作压强范围很窄,各种控制要求快速精准.真空炉

多弧溅射在靶材上施小电压大电流使材料离子化(带正电颗粒), 从而高速击向基片(负电)并沉积,形成致密膜坚硬膜。主要用于耐磨耐蚀膜。其缺点是正负电撞造成膜层不均匀,空穴、烧蚀。

中频溅射的原理跟一般的直流溅射是相同的,不同的是直流溅射把筒体当阳极,而中频溅射是成对的,筒体是否参加必须视整体设计而定,与整个系统溅射过程中,阳极阴极的安排有关,参与的比率周期有很多方法,不同的方法可得到不相同的溅射产额,得到不相同的离子密度

中频溅射主要技术在于电源的设计与应用,目前较成熟的是正弦波与脉冲方波二种方式输出,各有其优缺点,首先应考虑膜层种类,分析哪种电源输出方式适合哪种膜层,可以用电源特性来得到想要的膜层效果.

      There are many kinds of magnetron sputtering in vacuum furnace. There are different working principles and application objects. However, there is one thing in common: the interaction between magnetic field and electron makes the electron spiral around the target surface, thus increasing the probability of electron impacting argon to produce ions. The generated ions hit the target surface under the action of electric field, thus splashing out of the target. In recent decades of development, we gradually use permanent magnets, rarely coil magnets. 

    The target source is divided into equilibrium and non-equilibrium type, the equilibrium type target source coating is uniform, and the non-equilibrium type target source coating has strong binding force with the substrate. The balanced target source is mainly used for semiconductor optical films, and the unbalanced target source is mainly used for wear decorative films. 

    Whether the balance is unbalanced or not, if the magnet is stationary, its magnetic field characteristics determine that the utilization rate of the general target is less than 30%. In order to increase the utilization ratio of the target, the rotating magnetic field can be used. But the rotating magnetic field needs a rotating mechanism, and the sputtering rate should be reduced. Rotating magnetic field is mostly used for large or valuable targets. Such as semiconductor film sputtering. For small equipment and general industrial equipment, magnetic static target source is used.

    It is easy to sputter metal and alloy with magnetron target source in vacuum furnace, and easy to ignite and sputter. This is because the target (cathode), plasma, and splashed parts / vacuum cavity can form a circuit. But if sputtering insulator such as ceramic, the circuit will be broken. So people use high-frequency power supply, and a strong capacitance is added to the circuit. In this way, the target becomes a capacitor in the insulating circuit. However, the high frequency magnetron sputtering power supply is expensive, the sputtering rate is very small, and the grounding technology is very complex, so it is difficult to use it on a large scale. In order to solve this problem, magnetron reactive sputtering was invented. It is to use metal target, add argon and reaction gas such as nitrogen or oxygen. When the metal target collides with the part, it combines with the reaction gas to form nitride or oxide due to energy conversion.

     Reactive sputtering insulator of magnetron sputtering table seems easy, but it is difficult to operate in practice. The main problem is that the reaction occurs not only on the surface of parts, but also on the surface of anode, vacuum cavity and target source. So as to cause fire-fighting, arc on target source and workpiece surface, etc. The twin target source technology invented by German LeiBao solves this problem well. The principle is that a pair of target sources are cathode and anode to each other, so as to eliminate anodizing or nitriding on the anode surface.

   Cooling is necessary for all sources (magnetically controlled, multi arc, ion), because a large part of energy is converted into heat. If there is no cooling or insufficient cooling, this heat will make the target temperature reach more than 1000 degrees and dissolve the whole target. 

    A magnetic control equipment is often very expensive, but it is easy to spend money on other equipment such as vacuum pump, MFC, film thickness measurement and ignore the target source. No matter how good the magnetron sputtering equipment is, without a good target source, it's like a dragon without a finishing touch. 

   The advantages of medium frequency sputtering are smooth and compact, high film hardness, linear growth of film thickness, no poisoning, moderate temperature rise, but high requirements of equipment and narrow working pressure range, Various control requirements are fast and accurate.

  Vacuum furnace multi arc sputtering applies small voltage and large current to the target to make the material ionize (with positive particles), so as to hit the substrate (negative electricity) at high speed and deposit, forming a dense film hard. Mainly used for wear-resistant and corrosion-resistant film. Its disadvantage is that the film is uneven, cavitating and ablating. 

  The principle of medium frequency sputtering is the same as that of general DC sputtering. The difference is that the cylinder is used as the anode for DC sputtering, and the medium frequency sputtering is in pairs. Whether the cylinder participates in the sputtering depends on the overall design, which is related to the arrangement of anode and cathode in the whole system sputtering process. There are many ways to participate in the ratio period. Different methods can get different sputtering yields, The main technology of if sputtering with different ion density is the design and application of power supply.

  At present, sine wave and pulse square wave are two mature ways to output, each of which has its advantages and disadvantages. First, we should consider the type of film, analyze which power output mode is suitable for which film, and use the characteristics of power supply to get the desired film effect.

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