等离子刻蚀机的缺点？Disadvantages of plasma etcher?

1、 硅片水平运行，机片高（等离子刻蚀去PSG槽式浸泡甩干，硅片受冲击小）；

2、下料吸笔易污染硅片（等离子刻蚀去PSG后甩干）；

3、传动滚抽易变形（PVDF，PP材质且水平放置易变形）；

4、成本高（化学品刻蚀代替等离子刻蚀成本增加）。

此外，有些等离子刻蚀机，如SCE等离子刻蚀机还具备“绿色”优势：无氟氯化碳和污水、操作和环境安全、排除有毒和腐蚀性的液体。SCE等离子刻蚀机支持以下四种平面等离子体处理模式：

直接模式——基片可以直接放置在电极托架或是底座托架上，以获得最大的平面刻蚀效果。

各向同性刻蚀与非各向同性刻蚀

各向同性刻蚀与非各向同性刻蚀(3张)

定向模式——需要非等向性刻蚀（anisotropic etching）的基片可以放置在特制的平面托架上。

下游模式——基片可以放置在不带电托架上，以便取得微小的等离子体效果。

定制模式——当平面刻蚀配置不过理想时，特制的电极配置可以提供。

   1.The silicon wafer runs horizontally, and the machine chip is high (plasma etching to PSG bath soaking and drying, and the silicon wafer is subject to small impact);

   2.The cutting suction pen is easy to contaminate the silicon wafer (plasma etching to PSG and then drying);

   3. The transmission roll extraction is easy to deform (PVDF, PP material and horizontally placed is easy to deform);

   4. The cost is high (the cost of chemical etching to replace plasma etching increases). 

      In addition, some plasma etchers, such as SCE plasma etchers, also have "green" advantages: no CFC and sewage, safe operation and environment, toxic and corrosive liquids are eliminated. The SCE plasma etcher supports the following four plane plasma processing modes: 

 Direct mode - the substrate can be directly placed on the electrode bracket or the base bracket to obtain the maximum plane etching effect. Isotropic etching and non-isotropic etching isotropic etching and non-isotropic etching (3 pieces) 

 Orientation mode - the substrate that requires non isotropic etching can be placed on a special plane bracket. 

 Downstream mode - the substrate can be placed on an uncharged bracket to achieve a small plasma effect. 

 Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided.