带RIE等离子刻蚀机处理模式介绍The introduction of processing mode of plasma etching machine with RIE

 　　带RIE等离子刻蚀机是干法刻蚀中最常见的一种形式，其原理是暴露在电子区域的气体形成等离子体，由此产生的电离气体和释放高能电子组成的气体，从而形成了等离子或离子，电离气体原子通过电场加速时，会释放足够的力量与表面驱逐力紧紧粘合材料或蚀刻表面。某种程度来讲，等离子清洗实质上是等离子体刻蚀的一种较轻微的情况。进行干式蚀刻工艺的设备包括反应室、电源、真空部分。工件送入被真空泵抽空的反应室。气体被导入并与等离子体进行交换。等离子体在工件表面发生反应，反应的挥发性副产物被真空泵抽走。等离子体刻蚀工艺实际上便是一种反应性等离子工艺。

带RIE等离子刻蚀机处理模式：

　　直接模式——基片可以直接放置在电极托架或是底座托架上，以获得最大的平面刻蚀效果。

　　定向模式——需要非等向性刻蚀（anisotropic etching）的基片可以放置在特制的平面托架上。

　　下游模式——基片可以放置在不带电托架上，以便取得微小的等离子体效果。

　　定制模式——当平面刻蚀配置不过理想时，特制的电极配置可以提供。

湿法刻蚀相对于带RIE等离子刻蚀机的缺点

　　1. 硅片水平运行，机片高（等离子刻蚀去PSG槽式浸泡甩干，硅片受冲击小）；

　　2. 下料吸笔易污染硅片（等离子刻蚀去PSG后甩干）；

　　3. 传动滚抽易变形（PVDF，PP材质且水平放置易变形）；

　　4. 成本高（化学品刻蚀代替等离子刻蚀成本增加）。

　　此外，有些等离子刻蚀机，如SCE等离子刻蚀机还具备“绿色”优势：无氟氯化碳和污水、操作和环境安全、排除有毒和腐蚀性的液体。

带RIE等离子刻蚀机检验操作及判断

　　1. 确认万用表工作正常，量程置于200mV。

　　2.冷探针连接电压表的正电极，热探针与电压表的负极相连。

　　3.用冷、热探针接触硅片一个边沿不相连的两个点，电压表显示这两点间的电压为正值，说明导电类型为P 型，刻蚀合格。相同的方法检测另外三个边沿的导电类型是否为P型。

　　4.如果经过检验，任何一个边沿没有刻蚀合格，则这一批硅片需要重新装片，进行刻蚀

The plasma etcher with RIE is the most common form of dry etching. Its principle is that the gas exposed to the electronic region forms plasma, resulting in ionized gas and gas released from high-energy electrons, thus forming plasma or ion. When the ionized gas atom is accelerated by electric field, it will release enough force to tightly bond the material or etching table with the surface expulsion force Noodles. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process.        With RIE plasma etching machine processing mode: 

    Direct mode - the substrate can be directly placed on the electrode bracket or the base bracket to obtain the maximum plane etching effect. 

    Orientation mode - substrate requiring anisotropic etching can be placed on a special plane bracket.

    Downstream mode - the substrate can be placed on an uncharged bracket to achieve a small plasma effect.

    Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided. The disadvantages of wet etching compared with RIE plasma etching machine are: 

 1. The silicon wafer runs horizontally, with high chip height (plasma etching to PSG bath soaking and drying, and the silicon wafer has little impact); 

 2. The silicon wafer is easy to be polluted by the blanking pen (plasma etching to PSG and then drying);

 3. The transmission roll drawing is easy to deform (PVDF, PP material and placed horizontally); 

 4.High cost (the cost of chemical etching instead of plasma etching increases). In addition, some plasma etchers, such as SCE plasma etchers, also have "green" advantages: no CFC and sewage, safe operation and environment, toxic and corrosive liquids are eliminated. 

With RIE plasma etcher inspection operation and judgment 

1. Confirm that the multimeter works normally, and the range is set at 200mV.

2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter.

   3. Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type. 

   4. If any edge is not etched as qualified after inspection, this batch of silicon wafers shall be reloaded for etching